Frequency dependence of the dielectric constants and of the reflectivity for HfO2 and ZrO2 from first-principles calculations

被引：0
|
作者：
Silva, C. C. [1 ]
Leite Alves, H. W.
Scolfaro, L. M. R. [1 ]
机构：
[1] Univ Sao Paulo, Inst Fis, CEP, Sao Paulo, Brazil
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
phonons; pressure dependence; reflectivity; dielectric constant; high-k oxides;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present, in this work, our theoretical results for the phonon dispersions and the frequency dependence of the reflectivities and the dielectric constants Of ZrO2 and HfO2 in the monoclinic phase. The results show the importance of the lattice contribution for the evaluation of the static dielectric constant. Also, besides the anisotropy shown by these materials along the x and z directions, the zero frequency static dielectric constant decreases with the increasing pressure.
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页码：311 / +
页数：2
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