Study of diamond films prepared by hot filament chemical vapor deposition

被引:0
|
作者
Kromka, A [1 ]
Malcher, V [1 ]
Janík, J [1 ]
Dubravcová, V [1 ]
Satka, A [1 ]
Cerven, I [1 ]
机构
[1] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava 81219, Slovakia
关键词
diamond; growth; chemical vapor deposition; activation energy; XRD;
D O I
10.1109/ASDAM.2000.889505
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A systematic study of growth rate and quality of polycrystalline diamond films synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600 degreesC show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from (100) to (111) as a result of increased substrate temperature. The surface features of deposited films varied from rectangular- to triangular- like structures. The growth rate increased from 0.42 to 0.58 mum/h with increasing temperature from 600 to 900 degreesC for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.
引用
收藏
页码:299 / 302
页数:4
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