AlGaInAs/InP Monolithically Integrated DFB Laser Array

被引:24
|
作者
Hou, Lianping [1 ]
Haji, Mohsin [1 ]
Akbar, Jehan [1 ]
Marsh, John H. [1 ]
Bryce, Ann Catrina [1 ]
机构
[1] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland
基金
英国工程与自然科学研究理事会;
关键词
Distributed feedback laser; quantum-well intermixing; semiconductor laser array; semiconductor optical amplifier; sidewall Bragg gratings; WAVELENGTH; DIVERGENCE; COMBINER; DESIGN; GAIN;
D O I
10.1109/JQE.2011.2174455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The monolithic integration of four 1.50-mu m range AlGaInAs/InP distributed feed-back lasers with a 4x1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies - sidewall grating and quantum well intermixing - has been demonstrated. The four channels span the wavelength range of 1530-1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as 21.2 degrees x 25.1 degrees, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.
引用
收藏
页码:137 / 143
页数:7
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