Determination of Crystallite Size, Number of Graphene Layers and Defect density of Graphene Oxide (GO) and Reduced Graphene Oxide (RGO)

被引:67
|
作者
Kaushal, Ashish [1 ]
Dhawan, S. K. [2 ]
Singh, Vishal [1 ]
机构
[1] Natl Inst Technol Hamirpur, Ctr Mat Sci & Engn, Hamirpur 177005, India
[2] Natl Phys Lab, CSIR, Conducting Polymers Grp, New Delhi 110012, India
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D O I
10.1063/1.5112945
中图分类号
O59 [应用物理学];
学科分类号
摘要
Determination of crystallite size, number of graphene layers, interlayer spacing, and defect density with the use of X-ray diffraction and Raman spectroscopic technique. GO was synthesized by using Simple Hummer's method and was subjected to chemical reduction by using tri-sodium citrate. Particularly, the above parameters have presented by some mathematical equation usage. The shrinkage in the dimensions of crystallite upon reduction leads to decrease in number of graphene layers in each domain and clearly increase the defect density. XRD and Raman stated the formation of GO and its reduction to the formation of RGO.
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页数:4
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