Thermal-stability improvement of LaON thin film formed using nitrogen radicals

被引：8
|
作者：
Sato, S.
Tachi, K.
Kakushima, K.
Ahmet, P.
Tsutsui, K.
Sugii, N.
Hattori, T.
Iwai, H.
机构：
[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期
关键词：
lanthanum oxide; lanthammi oxynitride; nitrogen radical; EOT; MOSFET;
D O I：
10.1016/j.mee.2007.04.088
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports the influence of nitridation on structural and electrical proper-ties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3 structure. This is due to nitrogen in LaON and SiN.-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm(2) N s was obtained.
引用
收藏
页码：1894 / 1897
页数：4
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