Influence of the Ga Content on the Optical and Electrical Properties of CuIn1-xGaxSe2 Thin-Film Solar Cells

被引：0
|
作者：
Zhang, Zhenhao [1 ,2 ]
Witte, Wolfram [3 ]
Kiowski, Oliver [3 ]
Lemmer, Uli [1 ]
Powalla, Michael [1 ,3 ]
Hoelscher, Hendrik [2 ]
机构：
[1] Karlsruhe Inst Technol, Light Technol Inst, D-76131 Karlsruhe, Germany
[2] Karlsruhe Inst Technol, Inst Microstruct Technol, D-76131 Karlsruhe, Germany
[3] Forsch Baden Wurttemberg, Zentrum Sonnenenergie & Wasserstoff, D-70565 Stuttgart, Germany
来源：
2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2 | 2013年
关键词：
CIGS; cross-sectional KPFM; Ga content; PROBE FORCE MICROSCOPY; CROSS-SECTION; CHALCOPYRITES; MECHANISMS; EFFICIENCY; ABSORBER; CUGASE2;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Thin-film solar cells that are based on Cu(In,Ga)Se-2 (CIGS) absorbers with Ga/(Ga+In)-ratios from 0 to 1 are fabricated, and their optical and electrical properties are investigated by macroscopic (current density-voltage, external quantum efficiency) and microscopic (Kelvin probe force microscopy on untreated cross sections of solar cells) measurements. Combining all results, the diffusion voltages of individual solar cells are deduced and compared with the directly measured open-circuit voltages. An increasing splitoff between the diffusion voltage and the open-circuit voltage is observed for Ga addition, which indicates a higher recombination rate of photogenerated charge carriers in solar cells with higher Ga content.
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页数：5
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