Design and Demonstration of (AlxGa1-x)2O3/Ga2O3 Double Heterostructure Field Effect Transistor (DHFET)

被引：0
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作者：
Zhang, Yuewei [1 ]
Xia, Zhanbo [1 ]
Joishi, Chandan [1 ]
Rajan, Siddharth [1 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
来源：
2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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