A temperature compensated biaxial eFM accelerometer in Epi-seal process

被引:6
|
作者
Shin, Seungyong [1 ]
Kwon, Hyun-Keun [3 ]
Vukasin, Gabrielle D. [4 ]
Kenny, Thomas W. [5 ]
Ayazi, Farrokh [2 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Microsyst, Atlanta, GA 30332 USA
[3] Stanford Univ, Stanford, CA 94305 USA
[4] Stanford Univ, Mech Engn, Stanford, CA 94305 USA
[5] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
Dual axis resonant accelerometer; Wide bandwidth; Micro-gravity accelerometer; Temperature compensation; Epi-seal; RESONANT MEMS ACCELEROMETER; QUALITY FACTOR; STABILITY;
D O I
10.1016/j.sna.2021.112860
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the implementation of a vacuum-encapsulated bi-axial resonant accelerometer utilizing the electrostatic frequency modulation (eFM) technique. A novel flexure structure is designed to enable fully-decoupled in-plane displacement of the proof-mass to minimize cross-axis sensitivity. A differential readout scheme leveraging pairs of high quality factor (>12k) free-free beam resonators mitigates the first-order nonlinearities due to temperature effects and unwanted response to proof-mass spurious modes. The fabricated device measures a scale factor of 45.8 Hz/g with negligible cross-axis sensitivity (<2 %). Furthermore, the smooth characteristics of temperature coefficients of frequency (TCf) of the resonators enable an accurate temperature sensor using the common-mode frequency of the resonator pair. Applying a temperature compensation scheme utilizing the common-mode frequency output and pre-characterized TCfs, the accelerometer demonstrates superior performance measuring a VRW of 5.8 mu g/root Hz and BI of 5.7 mu g with a scale factor stability of 0.38 % and zero-g-output variation of 8.3 mg over temperature range from -20 degrees C to 80 degrees C. (C) 2021 Elsevier B.V. All rights reserved.
引用
收藏
页数:11
相关论文
共 50 条
  • [41] A Calibration-Free Low-Cost Process-Compensated Temperature Sensor in 130 nm CMOS
    Fisk, Robert P.
    Hasan, S. M. Rezaul
    IEEE SENSORS JOURNAL, 2011, 11 (12) : 3316 - 3329
  • [42] A Low-Power, Process-and-Temperature-Compensated Ring Oscillator With Addition-Based Current Source
    Zhang, Xuan
    Apsel, Alyssa B.
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2011, 58 (05) : 868 - 878
  • [43] Snap-back temperature dependence for an Epi-CMOS ASIC-process up to 250 degrees C
    Uffmann, D
    Ibrom, C
    Ackermann, J
    Stemmer, J
    Aderhold, J
    MICROELECTRONIC DEVICE AND MULTILEVEL INTERCONNECTION TECHNOLOGY II, 1996, 2875 : 85 - 96
  • [44] Miniature Temperature Compensated Fabry-Perot Pressure Sensors Created With Self-Aligned Polymer Photolithography Process
    Bae, Hyungdae
    Dunlap, Laura
    Wong, James
    Yu, Miao
    IEEE SENSORS JOURNAL, 2012, 12 (05) : 1566 - 1573
  • [45] A 46-ppm/°C Temperature and Process Compensated Current Reference with On-Chip Threshold Voltage Monitoring Circuit
    Ueno, Ken
    Hirose, Tetsuya
    Asai, Tetsuya
    Amemiya, Yoshihito
    2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, 2008, : 161 - +
  • [46] Effect of APS process parameters on high-temperature wear behavior of nickel-graphite abradable seal coatings
    Soltani, Reza
    Heydarzadeh-Sohi, Mahmoud
    Ansari, Mohammad
    Afsari, Fereshteh
    Valefi, Zia
    SURFACE & COATINGS TECHNOLOGY, 2017, 321 : 403 - 408
  • [47] A temperature compensated 100 MHz to 1 GHz variable gain amplifier in a 8 GHz 1.2 mu m BiCMOS process
    Hakkinen, J
    Rahkonen, T
    Kostamovaara, J
    ISCAS 96: 1996 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - CIRCUITS AND SYSTEMS CONNECTING THE WORLD, VOL 1, 1996, : 183 - 186
  • [48] A 32x32 CMOS Image Sensor: Tested Using Process and Temperature Compensated Voltage Controlled Current Source
    Kumar, P. Saidesh
    Seenivasan, M. A.
    18TH INTERNATIONAL SYMPOSIUM ON VLSI DESIGN AND TEST, 2014,
  • [49] DESIGN AND FABRICATION OF 3-AXIS ACCELEROMETER SENSOR MICROSYSTEM FOR WIDE TEMPERATURE RANGE APPLICATIONS USING SEMI-CUSTOM PROCESS
    Merdassi, A.
    Wang, Y.
    Xereas, G.
    Chodavarapu, V. P.
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XIX, 2014, 8973
  • [50] Process compensated bipolar junction transistor-based CMOS temperature sensor with a ±1.5°C (3σ) batch-to-batch inaccuracy
    Sun, Dapeng
    Zhang, Tan-Tan
    Law, Man-Kay
    Mak, Pui-In
    Martins, Rui Paulo
    ELECTRONICS LETTERS, 2018, 54 (22) : 1270 - 1271