Fabrication of nanogap electrodes using ultrathin metal film

被引:2
|
作者
Miyazaki, T [1 ]
Kobayashi, K
Ishida, K
Hotta, S
Horiuchi, T
Yamada, H
Matsushige, K
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Kyoto Univ, Int Innovat Ctr, Kyoto 6068501, Japan
[3] Inst Res & Innovat, Kashiwa Lab, Photon & Mat Res Dept, Kashiwa, Chiba 2770861, Japan
关键词
atomic force microscopy (AFM); nanogap; organic thin-film transistor (OTFT); oligothiophene;
D O I
10.1143/JJAP.42.4173
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated a trench structure on an ultrathin, flat Pt film by a scratching technique using an atomic force microscope (AFM) tip. Precise control of the loading force of the tip during the scratching process made it possible to fabricate a fine trench structure without Pt debris on both sides of the trench. Nanogap electrodes were made by this method. Their electrical isolation was confirmed by Kelvin-probe force microscopy (KFM) measurements. Furthermore, we evaporated methylquin-quethiophen (M5T) molecules onto the nanogap electrodes and measured the current-to-voltage (I-V) characteristics of the M5T film. We demonstrated that electrical measurements by KFM, utilizing ultrathin Pt nanogap electrodes, was a very attractive method of investigating the local properties of organic molecular films.
引用
收藏
页码:4173 / 4176
页数:4
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