Demonstration of Germanium Doping to GaP-based Dilute Nitrides

被引：0
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作者：
Yamane, Keisuke [1 ]
Tanaka, Shunsuke [1 ]
Wakahara, Akihiro [1 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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