Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

被引：89
|
作者：
Macco, B. [1 ,3 ]
Vos, M. F. J. [1 ,3 ]
Thissen, N. F. W. [1 ,3 ]
Bol, A. A. [1 ,3 ]
Kessels, W. M. M. [1 ,2 ,3 ,4 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Solliance Solar Res, NL-5656 AE Eindhoven, Netherlands
[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[4] Solliance Solar Res, NL-5656 AE Eindhoven, Netherlands
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 07期
关键词：
molybdenum oxide; atomic layer deposition; silicon heterojunction solar cells; passivating contacts; MOLYBDENUM OXIDE;
D O I：
10.1002/pssr.201510117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The preparation of high-quality molybdenum oxide (MoOx) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 degrees C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoOx in hole-selective contacts for silicon heterojunction solar cells. (C) 15 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
引用
收藏
页码：393 / 396
页数：4
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