Selective Laser Melting of Half-Heusler Thermoelectric Materials

被引:7
|
作者
Zhang, Haidong [1 ]
Wang, Shanyu [2 ]
Taylor, Patrick J. [3 ]
Yang, Jihui [2 ]
LeBlanc, Saniya [1 ]
机构
[1] George Washington Univ, Dept Mech & Aerosp Engn, 800 22nd St NW,Suite 3000, Washington, DC 20052 USA
[2] Univ Washington, Mat Sci & Engn Dept, 315 Roberts Hall, Seattle, WA 98195 USA
[3] US Army Res Lab, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
关键词
selective laser melting; additive manufacturing; laser powder bed fusion; half-Heusler; thermoelectric; semiconductor; processing parameters; ZrNiSn; HfZrCoSnSb; ENERGY DENSITY; PARAMETER;
D O I
10.1117/12.2306099
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Traditional thermoelectric device manufacturing uses machining, assembly, and integration steps which lead to material waste and performance limitations. The approach offers little flexibility in designing thermoelectric module geometry. Additive manufacturing can overcome these challenges, but it has not been demonstrated for inorganic thermoelectric materials, particularly those geared toward mid-/high-temperature applications. This work describes selective laser melting, an additive manufacturing process which locally melts successive layers of material powder to construct three-dimensional objects. The work shows the first-ever demonstrations of selective laser melting applied to half-Heusler thermoelectric materials: ZrNiSn, and Hf0.3Zr0.7CoSn0.3Sb0.7/nano-ZrO2. Laser processing parameters critically affects the formation and appearance of ingots, and we found laser energy density is useful but cannot be the single consideration for the SLM process. The fabricated ingots are generally porous with rough surfaces. They are characterized through powder XRD and TGA. The results consistently show that produced parts preserved most of the original chemical structures with small chemical changes due to decomposition and oxidation during the selective laser melting process. The work demonstrates selective laser melting is feasible for half-Heusler thermoelectric materials.
引用
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页数:8
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