Light-ion beam for microelectronic applications

被引：3

作者：

Hirsch, L

Tardy, P

Wantz, G

Huby, N

Moretto, P

Serani, L

Natali, F

Damilano, B

Duboz, JY

Reverchon, JL

机构：

[1] Univ Bordeaux 1, CNRS, UMR 5818, IXL Lab, F-33405 Talence, France

[2] Univ Bordeaux 1, CNRS, IN2P3, CENBG, F-33175 Gradignan, France

[3] CRHEA CNRS, F-06560 Valbonne, France

[4] Thales Res & Technol, F-91404 Orsay, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 240卷 / 1-2期

关键词：

RBs; IBIC; ALGaN; UV detectors; Bragg reflectors;

D O I：

10.1016/j.nimb.2005.06.127

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this paper we describe the structure and the composition of (AI,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (lambda = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 degrees, 25 degrees and 50 degrees). In a second part Of the paper, ion beam induced charges study has been carried out, with a 2 MeV He-4(+) micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：265 / 270

页数：6

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