Light-ion beam for microelectronic applications

被引：3
|
作者：
Hirsch, L
Tardy, P
Wantz, G
Huby, N
Moretto, P
Serani, L
Natali, F
Damilano, B
Duboz, JY
Reverchon, JL
机构：
[1] Univ Bordeaux 1, CNRS, UMR 5818, IXL Lab, F-33405 Talence, France
[2] Univ Bordeaux 1, CNRS, IN2P3, CENBG, F-33175 Gradignan, France
[3] CRHEA CNRS, F-06560 Valbonne, France
[4] Thales Res & Technol, F-91404 Orsay, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 240卷 / 1-2期
关键词：
RBs; IBIC; ALGaN; UV detectors; Bragg reflectors;
D O I：
10.1016/j.nimb.2005.06.127
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper we describe the structure and the composition of (AI,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (lambda = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 degrees, 25 degrees and 50 degrees). In a second part Of the paper, ion beam induced charges study has been carried out, with a 2 MeV He-4(+) micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：265 / 270
页数：6
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