Critical Currents of Bismuth 1G Tape

被引:7
|
作者
Woch, W. M. [1 ]
Zalecki, R. [1 ]
Chrobak, M. [1 ]
Kolodziejczyk, A. [1 ]
机构
[1] AGH Univ Sci & Technol, Fac Phys & Appl Comp Sci, Dept Solid State Phys, PL-30059 Krakow, Poland
关键词
SUPERCONDUCTORS;
D O I
10.12693/APhysPolA.127.315
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The critical currents of commercial bismuth based superconducting tape were determined in the two ways. In the first one the transport critical current density was measured by the four points method using the dc current power supply at the liquid nitrogen temperature. In the second one the critical current densities were obtained from the absorption part of ac susceptibility measurements using the Bean model near the critical temperature. The temperature dependence of the critical current densities was fitted to take advantage of the Ginzburg-Landau strong-coupling limit approach. Using the fit parameters the critical current density at 77 K was calculated. The critical temperature of this tape (T-c, = 110.5 K) was determined from the ac susceptibility measurements.
引用
收藏
页码:315 / 317
页数:3
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