Large area PbZr1-xTixO3 (PZT) thin films deposited by MOCVD processes

被引：0
|
作者：
Li, TK [1 ]
Hartford, E [1 ]
Zawadzki, P [1 ]
Stall, RA [1 ]
机构：
[1] EMCORE Corp, Somerset, NJ 08873 USA
来源：
FERROELECTRIC THIN FILMS VI | 1998年 / 493卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An advanced oxide MOCVD tool and processes have been developed to deposit large area PbZr1-xTixO3 (PZT) thin films on 6" Si and Pt/Ti/SiO2/Si substrates, The experimental results show the advanced oxide MOCVD tool can achieve the growth of PZT thin films with thickness uniformity of 2% and composition uniformity better that 3% on both 6" Si and Pt/Ti/SiO2/Si wafers at high deposition rates. X-ray patterns showed a single PZT perovskite phase, and AFM showed homogeneous microstructure and low surface roughness. Typically, 300 nm thick PZT films with a grain size about 0.3 mu m have Pr greater than 20 - 30 mu C/cm(2) at 5V, a dielectric constant around 1000, low coercive field (Ec 50 - 70 kV/cm), and fatigue rate (the normalized polarization is about 0.6 after 10(10) cycles at 5V), and leakage current of 2 - 6x10(-7) A/cm(2) at 150 kV/cm and room temperature on Pt electrodes. In addition, the effects of reactor design and process conditions on the thickness and composition uniformity, as well as the microstructure and properties were also investigated.
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页码：327 / 332
页数：6
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