Investigation of traps density and position in alkali treated Cu(In,Ga)Se2 thin films and solar cells

被引：0

作者：

Karki, Shankar ^{[1
]}

Paul, Pran K. ^{[2
]}

Rajan, Grace ^{[1
]}

Akwari, Chinedum ^{[1
]}

Rockett, Angus ^{[3
]}

Ringel, Steven A. ^{[2
]}

Arehart, Aaron R. ^{[2
]}

Marsillac, Sylvain ^{[1
]}

机构：

[1] Old Dominion Univ, Virginia Inst Photovolta, Norfolk, VA 23529 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[3] Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

Alkali PDT; CIGS; DLTS; DLOS; deep traps; thin-film solar cells;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This study contributes to the discussion on the deep traps in Cu(In,Ga)Se-2 material with KF post deposition treatment (KF PDT). The samples were prepared on nominally alkali-free alumina substrate. In order to investigate the deep traps, capacitance-based deep level transient and optical spectroscopies (DLTS/DLOS) were performed on the samples. Two defect levels were observed at Ev+0.59eV and Ev+0.98eV. Secondary ion mass spectrometry (SIMS) profile indicated the diffusion of potassium throughout the CIGS layer. Device measurements and simulation indicate that the Ev+0.98eV play an important role in reducing efficiency for devices without KF PDT.

引用

页码：2446 / 2448

页数：3

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