65 nm CMOS receiver with 4.2 dB NF and 66 dB gain for 60 GHz applications

被引：3

作者：

Wang, N. Y. ^{[1
]}

Wu, H. ^{[1
]}

Liu, J. Y. C. ^{[1
]}

Chang, M. -C. F. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 01期

关键词：

D O I：

10.1049/el.2010.3094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct conversion receiver for 60 GHz applications is fabricated in 65 nm CMOS. It consists of three low-noise amplifier gain stages, an RF mixer, a lowpass filter and a three-stage programmable gain amplifier. An overall minimum noise figure (NF) of 4.2 dB and maximum gain of 66 dB is achieved by the receiver occupying a core area of 0.26 mm(2) while drawing 36 mA of current from a 1 V supply.

引用

页码：15 / 16

页数：2

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