Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

被引：5

作者：

Hori, Masahiro ^{[1
]}

Uematsu, Masashi ^{[2
]}

Fujiwara, Akira ^{[3
]}

Ono, Yukinori ^{[1
]}

机构：

[1] Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, Japan

[2] Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

[3] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 14期

关键词：

TRANSIENT ENHANCED DIFFUSION; QUANTUM COMPUTER; DOPED SI; DOPANTS; DEACTIVATION; BEHAVIOR; DEFECTS; ARRAYS; BORON;

D O I：

10.1063/1.4917295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical activation of arsenic (As) implanted in Si is investigated with electron spin resonance (ESR), spreading resistance (SR), and secondary ion mass spectroscopy (SIMS). The As ions were implanted with a dose of 1 x 10(12) cm(-2) and subsequently annealed at various temperatures in the range of 500-1100 degrees C. The ESR measurements at 10 K show that the density of the As donor electrons for all the annealing temperatures is less than 10% of the As atom concentration measured by SIMS. The SR data indicate that the density of conduction band electrons is several times larger than that of the As donor electrons. These results strongly suggest that most of the As donor electrons are ESR inactive at low temperatures. (C) 2015 AIP Publishing LLC.

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页数：4

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