Hf-based high-k materials for Si nanocrystal floating gate memories

被引：34

作者：

Khomenkova, Larysa ^{[1
]}

Sahu, Bhabani S. ^{[2
]}

Slaoui, Abdelilah ^{[2
]}

Gourbilleau, Fabrice ^{[1
]}

机构：

[1] ENSICAEN, UCBN 6252, CEA, CIMAP,UMR,CNRS, F-14050 Caen 4, France

[2] CNRS, UDS, InESS, Strasbourg, France

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

DIELECTRICS; SUPERLATTICES; SIO2-FILMS; DEVICE; LAYERS;

D O I：

10.1186/1556-276X-6-172

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of +/-6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.

引用

页数：8

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