Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices

被引：19

作者：

Yang, Cheng-Fu

Chen, Kai-Huang

Chen, Ying-Chung ^{[1
]}

Chang, Ting-Chang

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 804, Taiwan

[2] Natl Univ Kaohsiung, Dept Chem & Mat Engn, Kaohsiung 804, Taiwan

[3] Tung Fang Inst Technol, Dept Elect Engn & Comp Sci, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 90卷 / 02期

关键词：

D O I：

10.1007/s00339-007-4277-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the effects of oxygen gas plasma treatment on the surface of Ba(Zr0.1Ti0.9)O-3 (BZT) films are investigated. The influence of oxygen plasma treatment on the crystal structure is developed by X-ray diffraction patterns and on the electrical characteristics are measured by the Al/BZT/Pt capacitor (metal-dielectric-metal) structure. Experimental results show that the capacitance increases and the leakage current density decreases as the oxygen plasma is treated on the BZT films. These results clearly indicate that the electrical characteristics of BZT films have effectively improved by means of the oxygen plasma surface treatment process.

引用

页码：329 / 331

页数：3

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