Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

被引：29

作者：

Huang, Jian ^{[1
]}

Guo, Daqian ^{[2
]}

Chen, Wei ^{[1
]}

Deng, Zhuo ^{[1
]}

Bai, Yinghao ^{[1
]}

Wu, Tinghui ^{[1
]}

Chen, Yaojiang ^{[1
]}

Liu, Huiyun ^{[2
]}

Wu, Jiang ^{[2
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201203, Peoples R China

[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

DETECTORS;

D O I：

10.1063/1.5011239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate a sub-monolayer quantum dot quantum cascade photodetector grown on GaAs for photovoltaic mid-infrared photo-detection. The detector shows a normal-incident peak responsivity of 1.90mA/W at the wavelength of 6.05 mu m and a resistance-area product of 1.54 x 10(8) Omega cm(2) at 77 K. The corresponding specific detectivity is 3.22 x 10(11) cm.Hz(1/ 2)/W. Published by AIP Publishing.

引用

页数：3

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