Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

被引：140
|
作者：
Tang, SF [1 ]
Lin, SY [1 ]
Lee, SC [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 17期
关键词：
D O I：
10.1063/1.1362201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5-7 mum range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (greater than or equal to 250 K) was demonstrated. The specific peak detectivity D* is 2.4x10(8) cm Hz(1/2)/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation. (C) 2001 American Institute of Physics.
引用
收藏
页码：2428 / 2430
页数：3
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