Near-Room-Temperature Mid-Infrared Quantum Well Photodetector

被引：14

作者：

Hinds, Sean ^{[1
]}

Buchanan, Margaret ^{[1
]}

Dudek, Richard ^{[1
]}

Haffouz, Sofiane ^{[1
]}

Laframboise, Sylvain ^{[1
]}

Wasilewski, Zbigniew ^{[1
]}

Liu, H. C. ^{[2
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Shanghai Jiao Tong Univ, Dept Phys, Key Lab Artificial Struct & Quantum Control, Shanghai 200240, Peoples R China

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 46期

关键词：

photovoltaic infrared imaging; intersubband quantum wells; gas sensing; micro-optoelectronics; photodetector noise; INFRARED PHOTODETECTORS; PERFORMANCE;

D O I：

10.1002/adma.201103372

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.

引用

页码：5536 / +

页数：5

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