Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

被引：1

作者：

Lee, Sang-Jin ^{[1
,2
]}

Park, Jae-Hoon ^{[1
]}

Oh, Kum-Mi ^{[1
]}

Lee, Seok-Woo ^{[1
]}

Lee, Kyung-Eon ^{[1
]}

Shin, Woo-Sup ^{[1
]}

Jun, Myung-Chul ^{[1
]}

Yang, Yong-Suk ^{[3
]}

Hwang, Yong-Kee ^{[1
]}

机构：

[1] LG Display R&D Ctr, Paju 413811, Gyeonggi, South Korea

[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[3] Pusan Natl Univ, Dept Nanomat Engn, Pusan 609735, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 06期

关键词：

INTERFACE STATE GENERATION; HOT-CARRIER INJECTION; LIFETIME PREDICTION; AMLCD APPLICATION; N-MOSFETS; DEGRADATION; MODEL;

D O I：

10.1143/JJAP.50.061401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose two types of six-step photomask, complementary metal-oxide-semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at V-ds = 5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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