Formation of Si3N4 by nitrogen implantation into SiC

Polycrystalline SiC and a bilayer of thin Zr deposited on SIC (Zr-SiC) were implanted with 50 keV N-15 ions at fluences in the range (0.25-1.5) x 10(18) ions cm(-2) at elevated temperature up to 1100 degrees C. After implantation, the depth profiles of the elements were measured using Rutherford backscattering spectroscopy (RES), nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES). The structure and chemical bonding state of the implanted layer were investigated by glancing angle X-ray diffraction (G-XRD) and X-ray photoelectron spectroscopy (XPS). It was found that the maximum concentration and halfwidth of the nitrogen profile implanted at 1100 degrees C were strongly decreased in comparison with those at room temperature, and nitrogen implantation into SiC at 1100 degrees C resulted in a composite layer of beta-Si3N4 and SiC. In Zr-SiC, the interfacial reaction of Zr and SiC was observed at high temperature, and a composite layer of ZrC, beta-Si3N4 and SiC was formed by nitrogen implantation.