In situ monitoring of the effect of Ge on the SiC growth on (111)Si surfaces

被引：0

作者：

Wöhner, T

Stauden, T

Schaefer, JA

Pezoldt, J

机构：

[1] TU Ilmenau, Inst Festkorperelektr, DE-98684 Ilmenau, Germany

[2] TU Ilmenau, Inst Phys, DE-98684 Ilmenau, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

carbonization; germanium; heteroepitaxy; in situ monitoring; SiC growth; spectroscopic ellipsometry;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

3C-SiC was grown by carbonization on (111)Si by solid source molecular beam epitaxy at 750 degreesC. The use of additional Ge deposition before or during carbonization leads to a lowering of the SiC growth rate in a different way at the beginning of the growth process, which was obtained by real time spectroscopic ellipsometry and real time RHEED. Ge is mainly incorporated at the SiC/Si interface and causes an increase of the SiC grain diameter independent on the incorporation method.

引用

页码：281 / 284

页数：4

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