In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(111) surfaces

被引：4
|
作者：
Cho, Sung-Pyo [1 ,2 ]
Kawano, Shinji [3 ]
Tanaka, Nobuo [1 ,2 ,3 ]
机构：
[1] Nagoya Univ, EcoTopia Sci Inst, Nagoya, Aichi 4648603, Japan
[2] CREST Japan Sci & Technol Agcy, Tokyo, Japan
[3] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 23期
关键词：
UHV in situ HR-profile TEM; Ge nanodot; epitaxial growth; the critical nucleus;
D O I：
10.1016/j.apsusc.2008.03.002
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the nucleation and evolution of germanium(Ge) nanodot (ND)s taking place while depositing Ge onto the silicon (Si) (1 1 1) surfaces with ultra-thin Si oxide films by using ultra-high vacuum in situ high-resolution transmission electron microscopy in the profile-imaging geometry. Various types of growth phenomena such as nucleation, growth and coalescence of Ge NDs have successfully been observed. The results show that the growth phenomena of the Ge NDs are dramatically rapid after their size reaches the size of the critical nucleus. The critical nucleus size estimated from a model using the cohesive energy of the Ge NDs has been consistent with observed one. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：7868 / 7871
页数：4
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