Numerical simulation of 300mm CZ silicon crystal growth with axial magnetic fields

被引：0
|
作者：
Xu, Wenting [1 ]
Tu, Hailing [1 ]
Chang, Qing [2 ]
Xiao, Qinghua [2 ]
Dai, Xiaolin [2 ]
Liu, Yunxia [2 ]
Li, Zongfeng [1 ]
Chang, Lin [1 ]
Liu, Weida [2 ]
机构：
[1] Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China
[2] GRINM Semicond Mat Co Ltd, Beijing 100088, Peoples R China
来源：
MATERIALS MODELING, SIMULATION, AND CHARACTERIZATION | 2011年 / 689卷
关键词：
Silicon; crystal growth; 300mm; magnetic field; simulation;
D O I：
10.4028/www.scientific.net/MSF.689.179
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.
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页码：179 / +
页数：2
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