Crystal surface heat transfer during the growth of 300mm monocrystalline silicon by the Czochralski process

被引：0
|
作者：
Wang, Zhengxing [1 ]
Ren, Yongsheng [1 ]
Ma, Wenhui [1 ,2 ]
Lv, Guoqiang [1 ]
Tan, Mingke [3 ]
Li, Xuehua [3 ]
Li, Shaoyuan [1 ]
Wan, Xiaohan [1 ]
Zhan, Shu [4 ]
Zeng, Yi [1 ]
Li, Ruopu [1 ]
机构：
[1] National Engineering Research Center of Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming,650093, China
[2] School of Engineering, Yunnan University, Kunming,650500, China
[3] Lijiang LONGi Silicon Materials Co., Ltd, Lijiang,674802, China
[4] School of Computer and Information, Hefei University of Technology, Hefei,230601, China
来源：
International Journal of Heat and Mass Transfer | 2025年 / 236卷
基金：
中国国家自然科学基金;
关键词：
Crystal growth from melt - Radiative Cooling - Radiative transfer - Silicon wafers;
D O I：
10.1016/j.ijheatmasstransfer.2024.126259
中图分类号：
学科分类号：
摘要：
This paper investigated the lower heat transfer efficiency of ingot after increasing the size of Czochralski monocrystalline silicon. To improve the heat transfer efficiency, industrial Czochralski monocrystalline furnaces use water-cooling jackets to enhance crystal heat transfer. Through two-dimensional modeling, radiative heat transfer between monocrystalline silicon and the water-cooling jacket was investigated. The results showed that the effective radiation on the crystal surface decreased, then increased, and then decreased again. Numerical simulations showed that the maximum effective radiation on the surface was greater than 60 000 W/m2, which represents a significant increase in the heat flow density compared with the radiation of the crystal without using water cooling. According to the angle factor definition, a model of the radiative heat transfer angle factor between the water-cooling jacket and silicon rod was established. The dynamic correlation equation between the radiation angle factor and geometrical parameter of the hot zone, solidification rate, and solidification time was derived. Finally, a water-cooling jacket suitable for growing large monocrystalline silicon rod was designed according to the model, which improved the growth efficiency of the crystals. The results of the study are of great significance for optimizing water-cooling jackets. © 2024 Elsevier Ltd
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