Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces

被引：0
|
作者：
Bertomeu, J
Puigdollers, J
Asensi, JM
Andreu, J
机构：
[1] Lab. de Física de Capes Fines, Dept. de Fis. Apl. i Electronica, Universitat de Barcelona, 08028 Barcelona (Catalonia), Av. Diagonal
来源：
APPLIED SURFACE SCIENCE | 1997年 / 108卷 / 02期
关键词：
D O I：
10.1016/S0169-4332(96)00600-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.
引用
收藏
页码：211 / 217
页数：7
相关论文
共 50 条
  • [11] Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications
    1600, American Institute of Physics Inc. (114):
  • [12] VIBRATIONAL EXCITATIONS IN A-SI1-XCX - H ALLOYS
    AGRAWAL, BK
    YADAV, PS
    GHOSH, BK
    PHYSICAL REVIEW B, 1989, 39 (11): : 7876 - 7880
  • [13] The energy gap in a-Si1-xCx: H alloys
    Phys Lett Sect A Gen At Solid State Phys, 5-6 (577):
  • [14] a-Si1-xCx:H TFTs:: Fabrication and modeling
    Estrada, M.
    Cerdeira, A.
    Garcia, R.
    Iniguez, B.
    2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 327 - +
  • [15] Microstructure and hydrogen dynamics in a-Si1-xCx:H
    Shinar, R.
    Shinar, J.
    Williamson, D.L.
    Mitra, S.
    Kavak, H.
    Dalal, V.L.
    Materials Research Society Symposium - Proceedings, 1999, 557 : 329 - 334
  • [16] Microstructure and hydrogen dynamics in a-Si1-xCx:H
    Shinar, R
    Shinar, J
    Williamson, DL
    Mitra, S
    Kavak, H
    Dalal, VL
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 329 - 334
  • [17] The energy gap in a-Si1-xCx:H alloys
    Valladares, AA
    Valladares, A
    Sansores, LE
    Mc Nelis, MA
    PHYSICS LETTERS A, 1997, 236 (5-6) : 577 - 582
  • [18] PREPARATION OF a-Si:H/a-Si1 - xCx:H SUPERLATTICES.
    Nishikawa, Satoshi
    Kakinuma, Hiroaki
    Watanabe, Tsukasa
    Nihei, Kouji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (08): : 1141 - 1143
  • [19] On the structural properties of a-Si1-xCx:H thin films
    DEMA-UFSCar, Sao Carlos, Brazil
    J Appl Phys, 3 (1324-1329):
  • [20] Quantitative analysis of a-Si1-xCx:H thin films
    Gracin, D
    Jaksic, M
    Yang, C
    Borjanovic, V
    Pracek, B
    APPLIED SURFACE SCIENCE, 1999, 144-45 : 188 - 191
12345