Observation of bistable defects in electron irradiated n-type 4H-SiC

被引：3

作者：

Beyer, Franziska C. ^{[1
]}

Hemmingsson, Carl ^{[1
]}

Pedersen, Henrik ^{[1
]}

Henry, Anne ^{[1
]}

Isoya, Junichi ^{[2
]}

Morishita, Norio ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Janzen, Erik ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58131 Linkoping, Sweden

[2] Univ Tsukuba, Grad Sch Lib Informat & Media Sci, Tsukuba, Ibaraki 3058850, Japan

[3] Japan Atom Energy Agcy, Gunma 3701292, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

metastable defects; bistability; electron irradiation; DLTS; METASTABLE DEFECTS; DEEP LEVELS;

D O I：

10.4028/www.scientific.net/MSF.679-680.249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A -> B and B -> A) take place above 700 degrees C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to E-A = 2.4 +/- 0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.

引用

页码：249 / +

页数：2

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