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Time-dependent transport in gated topological insulators
被引:0
|
作者
:
Li, Y.
论文数:
0
引用数:
0
h-index:
0
机构:
Hangzhou Dianzi Univ, Dept Phys, Hangzhou, Zhejiang, Peoples R China
Natl Univ Singapore, Computat Nanoelect & Nanodevice Lab, Singapore, Singapore
Hangzhou Dianzi Univ, Dept Phys, Hangzhou, Zhejiang, Peoples R China
Li, Y.
[
1
,
2
]
Jalil, M. B.
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Univ Singapore, Computat Nanoelect & Nanodevice Lab, Singapore, Singapore
Hangzhou Dianzi Univ, Dept Phys, Hangzhou, Zhejiang, Peoples R China
Jalil, M. B.
[
2
]
机构
:
[1]
Hangzhou Dianzi Univ, Dept Phys, Hangzhou, Zhejiang, Peoples R China
[2]
Natl Univ Singapore, Computat Nanoelect & Nanodevice Lab, Singapore, Singapore
来源
:
2015 IEEE MAGNETICS CONFERENCE (INTERMAG)
|
2015年
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
HU-02
引用
收藏
页数:1
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