Time-dependent transport in gated topological insulators

被引：0
|
作者：
Li, Y. [1 ,2 ]
Jalil, M. B. [2 ]
机构：
[1] Hangzhou Dianzi Univ, Dept Phys, Hangzhou, Zhejiang, Peoples R China
[2] Natl Univ Singapore, Computat Nanoelect & Nanodevice Lab, Singapore, Singapore
来源：
2015 IEEE MAGNETICS CONFERENCE (INTERMAG) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HU-02
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收藏
页数：1
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