Growth of InMnAsSb/InSb heterostructures with mid-infrared light-induced ferromagnetic properties

被引：0

作者：

Kanamura, M ^{[1
]}

Zhou, YK ^{[1
]}

Okumura, S ^{[1
]}

Asami, K ^{[1
]}

Nakajima, M ^{[1
]}

Harima, H ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New diluted magnetic semiconductor InMnAsSb/InSb hetero structures were proposed and grown on InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250 degreesC has higher crystal quality than that grown at 280 degreesC. Light-induced ferromagnetic order was observed, for the first time, when these samples were illuminated with the light of wavelengths longer than 2 mum. Corresponding to the Raman data, better light-induced ferromagnetic order was for the 250 degreesC-grown samples. The long-term preservation of the ferromagnetic order was confirmed even after the light-off.

引用

页码：599 / 602

页数：4

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