7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror

被引：10

作者：

Tu, Wei ^{[1
,2
]}

Chen, Ying ^{[1
,2
]}

Zong, Nan ^{[1
]}

Liu, Ke ^{[1
]}

Wang, Zhi-Min ^{[1
]}

Zhang, Feng-Feng ^{[1
]}

Zhang, Shen-Jin ^{[1
]}

Yang, Feng ^{[1
]}

Yuan, Lei ^{[1
]}

Bo, Yong ^{[1
]}

Peng, Qin-Jun ^{[1
]}

Cui, Da-Fu ^{[1
]}

Xu, Zu-Yan ^{[1
]}

机构：

[1] Chinese Acad Sci, Tech Inst Phys & Chem, Res Ctr Laser Phys & Technol, Key Lab Funct Crystal & Laser Technol, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

来源：

APPLIED OPTICS | 2015年 / 54卷 / 11期

基金：

中国国家自然科学基金;

关键词：

PUMPED ND-YVO4 LASER; 1.34; MU-M; CW LASER; CRYSTAL;

D O I：

10.1364/AO.54.003389

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality. A maximum average output power of 7.63 W was obtained with a repetition rate of 77 MHz and a pulse duration of 24.2 ps under an absorbed pump power of 38.6 W, corresponding to an optical-optical efficiency of 19.7% and a slope efficiency of 25.9%, respectively. The beam quality factor M-2 was measured to be 1.49. (C) 2015 Optical Society of America

引用

页码：3389 / 3392

页数：4

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