7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror

被引：10

作者：

Tu, Wei ^{[1
,2
]}

Chen, Ying ^{[1
,2
]}

Zong, Nan ^{[1
]}

Liu, Ke ^{[1
]}

Wang, Zhi-Min ^{[1
]}

Zhang, Feng-Feng ^{[1
]}

Zhang, Shen-Jin ^{[1
]}

Yang, Feng ^{[1
]}

Yuan, Lei ^{[1
]}

Bo, Yong ^{[1
]}

Peng, Qin-Jun ^{[1
]}

Cui, Da-Fu ^{[1
]}

Xu, Zu-Yan ^{[1
]}

机构：

[1] Chinese Acad Sci, Tech Inst Phys & Chem, Res Ctr Laser Phys & Technol, Key Lab Funct Crystal & Laser Technol, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

来源：

APPLIED OPTICS | 2015年 / 54卷 / 11期

基金：

中国国家自然科学基金;

关键词：

PUMPED ND-YVO4 LASER; 1.34; MU-M; CW LASER; CRYSTAL;

D O I：

10.1364/AO.54.003389

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality. A maximum average output power of 7.63 W was obtained with a repetition rate of 77 MHz and a pulse duration of 24.2 ps under an absorbed pump power of 38.6 W, corresponding to an optical-optical efficiency of 19.7% and a slope efficiency of 25.9%, respectively. The beam quality factor M-2 was measured to be 1.49. (C) 2015 Optical Society of America

引用

下载

页码：3389 / 3392

页数：4

共 50 条

[1] Passively mode-locked YVO4/Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror
Li, T.
Zhao, S. Z.
Zuo, Z.
Wang, Y. G.
Li, G. Q.
LASER PHYSICS LETTERS, 2009, 6 (01) : 30 - 33
[2] Passively mode-locked YVO4/Nd:YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector
Zhuo, Z.
Li, T.
Wang, Y. -G.
LASER PHYSICS LETTERS, 2008, 5 (06) : 421 - 424
[3] Optimization of the mode-locked Nd:YVO4 laser with a semiconductor saturable absorber mirror
Li, Dechun
Zhao, Shengzhi
Liu, Rongyang
Wei, Wei
Yang, Kejian
OPTIK, 2013, 124 (14): : 1686 - 1691
[4] 5.3-W Nd:YVO4 passively mode-locked laser by a novel semiconductor saturable absorber mirror
蔡志强
温午麒
王勇刚
张志刚
马骁宇
丁欣
姚建铨
Chinese Optics Letters, 2005, (06) : 342 - 344
[5] Passively Q-switched and mode-locked YVO4/Nd:YVO4/Nd:YVO4 laser based on a MoS2 saturable absorber at 1342.5 nm
Zhang, Gang
Wang, Yonggang
Wang, Jiang
Jiao, Zhiyong
OPTICS AND LASER TECHNOLOGY, 2019, 109 : 293 - 296
[6] Passively mode-locked grown-together composite YVO4 /Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping
李芳琴
宗楠
王志超
韩琳
薄勇
彭钦军
崔大复
许祖彦
Chinese Optics Letters, 2011, 9 (04) : 60 - 63
[7] Passively mode-locked Tm,Ho:YVO4 laser based on a semiconductor saturable absorber mirror
姚宝权
王维
于快快
李纲
王月珠
Chinese Optics Letters, 2012, 10 (07) : 49 - 51
[8] Passively mode-locked Tm,Ho:YVO4 laser based on a semiconductor saturable absorber mirror
Yao, Baoquan
Wang, Wei
Yu, Kuaikuai
Li, Gang
Wang, Yuezhu
CHINESE OPTICS LETTERS, 2012, 10 (07)
[9] Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping
Li, Fangqin
Zong, Nan
Wang, Zhichao
Han, Lin
Bo, Yong
Peng, Qinjun
Cui, Dafu
Xu, Zuyan
CHINESE OPTICS LETTERS, 2011, 9 (04)
[10] A passively mode-locked Nd:YVO4 laser with a carbon nanotube saturable absorber
Qin, H. B.
Wang, Y. G.
Zhang, H. B.
Liu, J.
Zhuo, Z.
LASER PHYSICS, 2012, 22 (04) : 684 - 687

← 1 2 3 4 5 →