Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation

被引：17
|
作者：
Dupont, E [1 ]
Gao, M [1 ]
Wasilewski, Z [1 ]
Liu, HC [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 14期
关键词：
D O I：
10.1063/1.1359482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A multicolor infrared photodetector based on the epitaxial integration of an n-type with a p-type GaAs/AlGaAs quantum-well stack is experimentally demonstrated. Additionally, a quantum-well GaAs light-emitting diode is inserted between the stacks to achieve up-conversion of mid-infrared radiation to near-infrared signal. This device shows a remarkable selectivity on wavelength: depending on the bias voltage the peak wavelength detection can be switched on and off between 9.1 and 4.85 mum. (C) 2001 American Institute of Physics.
引用
收藏
页码：2067 / 2069
页数：3
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