Terahertz Edge Detection with Antenna-Coupled Field-Effect Transistors in 0.25 μm AlGaN/GaN Technology

被引：0

作者：

Boppel, S. ^{[1
]}

Ragauskas, M. ^{[2
]}

Hajo, A. ^{[1
]}

Bauer, M. ^{[1
]}

Lisauskas, A. ^{[1
]}

Chevtchenko, S. ^{[3
]}

Raemer, A. ^{[3
]}

Kasalynas, I. ^{[2
]}

Valusis, G. ^{[2
]}

Wuerfl, J. ^{[3
]}

Heinrich, W. ^{[3
]}

Traenkle, G. ^{[3
]}

Krozer, V. ^{[1
,3
]}

Roskos, H. G. ^{[1
]}

机构：

[1] Goethe Univ Frankfurt, Inst Phys, Frankfurt, Germany

[2] Ctr Phys Sci & Technol, Vilnius, Lithuania

[3] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany

来源：

2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bow-tie antenna coupled field-effect transistors have been implemented in 0.25 mu m AlGaN/GaN process technology and have been mounted on an aplanatic hemispherical silicon substrate lens. By asymmetric coupling of 590-GHz radiation to the channel, the transistors are used as direct power detectors, achieving system noise-equivalent power values of 166 pW/root Hz at 590 GHz (referred to the total beam power). By symmetric coupling, edge detection is achieved on a device level.

引用

页数：1

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