Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

被引:25
|
作者
Phan, Duy-Thach [1 ]
Chung, Gwiy-Sang [1 ]
机构
[1] Univ Ulsan, Sch Elect Engn, Ulsan 680749, South Korea
关键词
SAW UV sensor; ZnO film; 3C-SiC buffer layer; OPTICAL-PROPERTIES; SIC BUFFER; SI(111) SUBSTRATE; MULTILAYERS; DEVICE;
D O I
10.1016/j.cap.2011.08.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(mu W/cm(2)) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(mu W/cm(2)) in ZnO/Si structures with UV intensity varied until 600 mu W/cm(2). (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:521 / 524
页数:4
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