Monte Carlo Study of Temperature and Bias dependence of Spin Transport in GaAs

被引：2

作者：

Kapoor, Sheetal ^{[1
]}

Marchetti, Gionni ^{[1
]}

Rossi, Fausto ^{[2
]}

D'Amico, Irene ^{[1
]}

机构：

[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[2] Politecn Torino, Dept Phys, Turin, Italy

来源：

JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS) | 2011年 / 303卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/1742-6596/303/1/012095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ensemble Monte Carlo approach has been used to simulate spin relaxation in GaAs devices. Effect of varying temperature and applied bias on spin relaxation time has been studied in n-type bulk GaAs. Our results show that the spin relaxation times are longer at low temperatures and that increasing the applied bias yields enhancement of the spin polarization in the system

引用

页数：5

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