Optically and electrically pumped GaN-based VCSELs

被引：0

作者：

Lu, T. C. ^{[1
]}

Kao, C. C. ^{[1
]}

Huang, G. S. ^{[1
]}

Kuo, H. C. ^{[1
]}

Wang, S. C. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 300, Taiwan

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the recent progress of GaN-based VCSELs with a hybrid cavity structure comprised an epitaxial AlN/GaN DBR with superlattice insertion layers, an InGaN/GaN MQW active region and a top dielectric DBR. The lasers achieved laser action under optical pumping at the room temperature with a narrow linewidth. The preliminary results of the electrically pumped VCSEL will also be presented.

引用

页码：987 / 988

页数：2

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