Anomalous magnetoresistance behavior of bismuth antidot arrays.

被引：0
|
作者：
Rabin, O [1 ]
Dressethaus, MS [1 ]
机构：
[1] MIT, Dept Chem, Cambridge, MA 02139 USA
来源：
CONTINUOUS NANOPHASE AND NANOSTRUCTURED MATERIALS | 2004年 / 788卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Antidot arrays were formed in thin films of bismuth by the e-beam evaporation of the metal on the porous surface of porous anodic alumina templates. The magnetoresistance of the antidot array films was measured and compared to that of films deposited on glass slides. A significant difference in magnetoresistance behavior was observed, and this difference was attributed to the enhancement of the two dimensional weak antilocalization effect in the antidot arrays. Scattering rates were obtained by fitting the experimental results to the theoretical expression. The results indicate that the antidot morphology enhances the elastic scattering rate over the inelastic scattering rate.
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页码：55 / 60
页数：6
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