Influence of interface dipoles on the UV/Solar rejection ratios of GaN/AlGaN/GaN photodetectors

被引：2
|
作者：
Zhang, CF [1 ]
Yue, H
You, HL
Zhang, JF
Zhou, XW
机构：
[1] Xidian Univ, Inst Microelect, Key Lab Wide Band Gap Semicond Mat, Xian 710071, Peoples R China
[2] Xidian Univ, Inst Microelect, Devices Minist Educ, Xian 710071, Peoples R China
来源：
ACTA PHYSICA SINICA | 2005年 / 54卷 / 08期
关键词：
UV/Solar rejection ratios; solar-blind photodetector; polarization; dipole;
D O I：
10.7498/aps.54.3810
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the inverted heterostructure photodiodes (IHPs) the strong polarization effect at the interface of the AlGaN/GaN heterostructure influences UV/Solar rejection ratios of this type of structure. In this paper, the total effect of polarization is divided into two parts: the polarization and dipole terms. Based on the model of GaN/AlGaN/GaN IHPs, the influence of dipoles on the UV/Solar rejection ratios is analyzed. The results show that when dipoles are considered, UV/Solar rejection ratios of photodetectors are about three orders of magnitude, which agree with the experiment of Tarsa. The influence of dipoles should be considered in the IHPs.
引用
收藏
页码：3810 / 3814
页数：5
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