Very high temperature operation of ∼ 5.75 μm quantum cascade lasers

被引：0

作者：

Friedrich, A ^{[1
]}

Scarpa, G ^{[1
]}

Boehm, G ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Muenchen, Walter Schottky Inst, D-85748 Garching, Germany

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have fabricated GaInAs/AlInAs strain-compensated quantum cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy (MBE). Low threshold current densities and high temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode.

引用

页码：1567 / 1568

页数：2

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