Characteristics of Fe3O4/ZnO nanocomposite as a possible gate dielectric of nanoscale transistors in the field of cyborg

Some issues such as tunneling current, boron diffusion through the ultra-thin silicon dioxide gate dielectric and leakage current in the current metal oxide semiconductor field effect transistor cause that researchers have tried to find an alternative high-K gate dielectric material. For this purpose, Fe3O4/ZnO nanocomposite, as a possible gate dielectric, is synthesized by sol-gel method and its electrical and nanostructural properties are studied by X-ray diffraction, Leakage current-voltage and Fourier transform infrared spectroscopy, GPS 132A, cyclic-voltammetry and field effect scanning electron microscopy techniques. The obtained results show that, with increasing the aspect ratio and reducing the size of the nanocomposite, the electrical characterization improved. Fe3O4/ZnO with 1:10 molar ratio can be considered not only as a good gate dielectric of nano scale transistor, but also one of the options in the field of cyborg; a branch of medical science for integrate electronic structures of biological tissue to therapeutic targets and sensors.