Temperature effect on the roughness of the formation interface of p-type porous silicon

被引：75

作者：

Setzu, S ^{[1
]}

Lerondel, G ^{[1
]}

Romestain, R ^{[1
]}

机构：

[1] Univ Grenoble 1, CNRS, UMR 5588, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 06期

关键词：

D O I：

10.1063/1.368467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the influence of the anodization temperature on the formation of porous Si for different current intensities. We have monitored the porosity, growth rate, luminescence, refractive index, and porous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical quality (R-max=99.5%) for low doped p-type silicon. (C) 1998 American Institute of Physics.

引用

页码：3129 / 3133

页数：5

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