Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

被引：8
|
作者：
Otsuji, Taiichi [1 ]
Karasawa, Hiromi [1 ]
Watanabe, Takayuki [1 ]
Suemitsu, Tetsuya [1 ]
Suemitsu, Maki [1 ]
Sano, Eiichi [2 ]
Knap, Wojciech [3 ,4 ]
Ryzhii, Victor [5 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 980, Japan
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido, Japan
[3] Univ Montpellier, F-34059 Montpellier, France
[4] Ctr Natl Rech Sci, Montpellier, France
[5] Univ Aizu, Computat Nanoelect Lab, Aizu Wakamatsu, Japan
来源：
COMPTES RENDUS PHYSIQUE | 2010年 / 11卷 / 7-8期
关键词：
Terahertz emission; Two-dimensional electrons; Plasmons; Graphene; Heterostructures; FAR-INFRARED-EMISSION; QUANTUM-CASCADE LASERS; MOBILITY TRANSISTORS; PLASMA-OSCILLATIONS; GRAPHENE; SPECTROSCOPY; INSTABILITY; GENERATION; EXCITATION; INVERSION;
D O I：
10.1016/j.crhy.2010.04.002
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion. (C) 2010 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码：421 / 432
页数：12
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