Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor Switch

被引：37

作者：

James, Colt ^{[1
]}

Hettler, Cameron ^{[1
]}

Dickens, James ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 02期

关键词：

Photoconducting devices; photoconductivity; power semiconductor switches; silicon carbide;

D O I：

10.1109/TED.2010.2089689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power vertical photoconductive switch was fabricated from a high-purity semi-insulating 4H-SiC wafer. The device was fabricated from an as-grown wafer with resistivity > 10(9) Omega . cm and had a dark resistance of greater than 6 x 10(9) Omega. The switch was operated at 15 kV/cm and achieved a peak photocurrent of 14 A into a 25-Omega load. Optimization of the excitation wavelength and switch geometry using an optical parametric oscillator was studied in order to decrease the laser requirements for optical triggering. This has led to a decrease in ON-state resistance of almost two orders of magnitude for similar excitation energy levels at visible wavelengths. This work forms the basis for developing very compact high-voltage photoconductive switches.

引用

页码：508 / 511

页数：4

共 50 条

[21] Semiconductor lasers from photoconductive switch filaments
Zutavern, FJ
Baca, AG
Chow, WW
Hafich, MJ
Hjalmarson, HP
Loubriel, GM
Mar, A
O'Malley, MW
Vawter, GA
PPPS-2001: PULSED POWER PLASMA SCIENCE 2001, VOLS I AND II, DIGEST OF TECHNICAL PAPERS, 2001, : 170 - 173
[22] Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches
Wang, Langning
Xun, Tao
Yang, Hanwu
Liu, Jinliang
Zhang, Yu
REVIEW OF SCIENTIFIC INSTRUMENTS, 2014, 85 (04):
[23] Evaluation of GaN:Fe as a High Voltage Photoconductive Semiconductor Switch for Pulsed Power Applications
Mauch, D.
Dickens, J.
Kuryatkov, V.
Meyers, V.
Ness, R.
Nikishin, S.
Neuber, A.
2015 IEEE PULSED POWER CONFERENCE (PPC), 2015,
[24] A high-speed silicon photoconductive switch
Wu, TX
Shang, BH
Vorst, AV
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1996, 11 (04) : 177 - 179
[25] Intelligent, Compact and Robust Semiconductor Circuit Breaker Based on Silicon Carbide Devices
Handt, K.
Griepentrog, G.
Maier, R.
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, : 1586 - 1591
[26] PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH EXPERIMENTS FOR PULSED POWER APPLICATIONS
ZUTAVERN, FJ
LOUBRIEL, GM
OMALLEY, MW
SHANWALD, LP
HELGESON, WD
MCLAUGHLIN, DL
MCKENZIE, BB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) : 2472 - 2477
[27] Pulsewidth Control of Nonlinear GaAs Photoconductive Semiconductor Switch
Shi, Wei
Wu, Meilin
Ma, Cheng
Chen, Zhiyuan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (08) : 4396 - 4400
[28] A photoconductive semiconductor switch based on an individual ZnS nanobelt
Zheng, X. J.
Chen, Y. Q.
Zhang, T.
Jiang, C. B.
Yang, B.
Yuan, B.
Mao, S. X.
Lie, W.
SCRIPTA MATERIALIA, 2010, 62 (07) : 520 - 523
[29] Optical absorption mechanism of GaAs photoconductive semiconductor switch
Tian, Liqiang
Shi, Wei
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
[30] Photoconductive Switch Design for Microwave Applications
Karabegovic, Armin
O'Connell, Robert M.
Nunnally, William C.
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2009, 16 (04) : 1011 - 1019

← 1 2 3 4 5 →