Growth and field emission of GaN nanowires grown by metal organic chemical vapour deposition

被引：5

作者：

Inoue, Y. ^{[1
]}

Tajima, A. ^{[1
]}

Takeda, S. ^{[1
]}

Ishida, A. ^{[1
]}

Mimura, H. ^{[1
]}

Sakakibara, S. ^{[2
]}

机构：

[1] Shizuoka Univ, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan

[2] Yamaha Corp, Iwata, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

基金：

日本学术振兴会;

关键词：

D O I：

10.1002/pssc.200674775

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Gallium nitride nanowires were grown on Si by Ni-catalyst-assisted metalorganic chemical vapor deposition via a vapor-liquid-solid growth mechanism. The GaN nanowires have a very high growth rate of > 100 mu m/h and a very high aspect ratio of 1000; similar to 20 nm in diameter and -20 mu m in length. In the field emission measurement, the GaN nanowires showed a low turn-on field of 6 V/mu m. The good result is attributed to the near-vertical growth and the very high aspect ratio, as well as a low electron affinity. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2366 / +

页数：2

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